Galaxy S25 could be way faster than iPhone 16 Pro
Qualcomm will unveil the Snapdragon 8 Gen 4, which could make its way into the Galaxy S25 series smartphones, at the Snapdragon Summit in October this year.
According to multiple reports, the upcoming SoC will offer a huge jump in performance compared to its predecessor, the Snapdragon 8 Gen 3, which powers the Galaxy S24 Ultra. A previous leak had claimed that the Snapdragon 8 Gen 4 would achieve a single-core score of 2,800 points on Geekbench, a huge jump over the Snapdragon 8 Gen 3’s score of 2,100 points. Well, today, we have even more exciting news about the upcoming SoC.
Snapdragon 8 Gen 4 could outperform Apple A18
According to a new leak from China, the Snapdragon 8 Gen 4 will be able to achieve a single-core score of 3,500 points. If that turns out to be true, it would be mind-blowing. On the other hand, the Apple A18 chipset, which is expected to power the iPhone 16 Pro models, is said to achieve 3,300 points in the test. The leak also says that the Snapdragon 8 Gen 4’s multi-core and GPU performance will also be faster than that of the Apple A18.
It means that the Snapdragon 8 Gen 4 will fully dominate the Apple A18, allowing the Galaxy S25 series to outperform the iPhone 16 Pro lineup. If the leak turns out to be true, a Samsung smartphone will be able to beat an iPhone in single-core performance for the first time. Wouldn’t that be amazing?
Highest CPU clock frequency in the industry
The Snapdragon 8 Gen 4 will have the Oryon core(s) as prime cores and Pheonix cores as high-performance cores. According to another leak, Qualcomm will clock the Oryon core(s) at 4.3GHz, a figure that is unheard of in the mobile industry and way ahead of the competition, and Pheonix cores at 3.8GHz.
The tipster who revealed this information also claims that the chipset might draw 1.3V of power to reach those frequencies, which could cause several issues, including overheating and thermal throttling, and that the Snapdragon 8 Gen 4 will be Qualcomm’s first chipset to use N3E (3nm) fabrication process.
Qualcomm will unveil the Snapdragon 8 Gen 4, which could make its way into the Galaxy S25 series smartphones, at the Snapdragon Summit in October this year.
According to multiple reports, the upcoming SoC will offer a huge jump in performance compared to its predecessor, the Snapdragon 8 Gen 3, which powers the Galaxy S24 Ultra. A previous leak had claimed that the Snapdragon 8 Gen 4 would achieve a single-core score of 2,800 points on Geekbench, a huge jump over the Snapdragon 8 Gen 3’s score of 2,100 points. Well, today, we have even more exciting news about the upcoming SoC.
Snapdragon 8 Gen 4 could outperform Apple A18
According to a new leak from China, the Snapdragon 8 Gen 4 will be able to achieve a single-core score of 3,500 points. If that turns out to be true, it would be mind-blowing. On the other hand, the Apple A18 chipset, which is expected to power the iPhone 16 Pro models, is said to achieve 3,300 points in the test. The leak also says that the Snapdragon 8 Gen 4’s multi-core and GPU performance will also be faster than that of the Apple A18.
It means that the Snapdragon 8 Gen 4 will fully dominate the Apple A18, allowing the Galaxy S25 series to outperform the iPhone 16 Pro lineup. If the leak turns out to be true, a Samsung smartphone will be able to beat an iPhone in single-core performance for the first time. Wouldn’t that be amazing?
Highest CPU clock frequency in the industry
The Snapdragon 8 Gen 4 will have the Oryon core(s) as prime cores and Pheonix cores as high-performance cores. According to another leak, Qualcomm will clock the Oryon core(s) at 4.3GHz, a figure that is unheard of in the mobile industry and way ahead of the competition, and Pheonix cores at 3.8GHz.
The tipster who revealed this information also claims that the chipset might draw 1.3V of power to reach those frequencies, which could cause several issues, including overheating and thermal throttling, and that the Snapdragon 8 Gen 4 will be Qualcomm’s first chipset to use N3E (3nm) fabrication process.
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