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HBM3E

NVIDIA CEO signs his approval on Samsung’s HBM3E memory, literally

Samsung's HBM3E 12H advanced memory chips have received high praise from NVIDIA CEO Jensen Huang recently. He confirmed that the company is testing these new memory models for integration into its GPUs, as unrelenting demand continues for its products. Such is the nature of the close collaboration between these two titans of the industry that Huang made a visit to Samsung's booth at NVIDIA's GTC 2024 conference and literally signed his approval on Samsung's latest high bandwidth memory module. NVIDIA CEO Jense Huang…

Samsung unveils higher capacity HBM3E memory for faster AI training and inference

Samsung just announced HBM3E 12H DRAM with advanced TC NCF technology – fans of acronyms must be excited at reading this, but for everyone else here’s what that means. HBM stands for “high bandwidth memory” and it does what it says on the tin. In October Samsung unveiled HBM3E Shinebolt, an enhanced version of the third generation of HBM that could achieve 9.8Gbps per pin (and 1.2 terabytes per second for the whole package). Next, 12H. This is simply the number of chips that have been stacked vertically in each…

Samsung becomes first to introduce 12-stack HBM3E amid high demand from AI

Samsung said on Tuesday that it has developed the industry's first 12-stack HBM3E DRAM, making it a high bandwidth memory with the highest capacity to date.The South Korean tech giant said the HBM3E 12H DRAM provides a maximum bandwidth of 1,280GB/s and a capacity of 36GB. The bandwidth and capacity are all up by 50% compared to 8-stack HBM3, Samsung said.HBMs are comprised of multiple DRAM modules stacked vertically, each called a stack or a layer. In the case of Samsung's latest, each DRAM module has a capacity of 24

Samsung develops industry’s first 36GB HBM3E 12H DRAM

Samsung, the world leader in semiconductor memory chips, has announced that it has developed the industry's first 12-stack HBM3E DRAM chip. It is the world's highest-capacity HBM memory chip to date, and the company claims that it offers 50% higher capacity and performance than previous-generation HBM memory chips. Samsung unveils industry's first 36GB HBM3E DRAM chip According to Samsung, its HBM3E 12H chip offers a bandwidth of up to 1,280GB/s and a capacity of up to 36GB. That is 50% higher than current-generation…